Ultra Start 26XX Series Manual de instrucciones Pagina 12

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A Wealth of Applications
12
Thickness Measurements of Cling Films
Band Gap Measurements for
Compound Semiconductors
DNA and Protein Measurements
Electricity, Electronics,
and Optics
Chemicals
Life Sciences
The diffuse reflection spectra for two types of compound
semiconductors (red line: Culn
0.5
Ga
0.5
Se
2
, blue line: CulnSe
2
) used as
solar cell materials have been measured using the ISR-2600Plus
integrating sphere. It is evident that the absorption edge (position
where the reflectance drops) differs depending on the sample. This
difference signifies a difference in the band gap* for these samples.
(The samples were provided by Wada Laboratory, Faculty of Science
and Technology, Ryukoku University.)
The band gaps for the samples were calculated utilizing the Tauc
method. The results obtained were 1.27 eV for Culn
0.5
Ga
0.5
Se
2
(red
line) and 0.99 eV for CulnSe
2
(blue line).
* The term band gap refers to the energy difference between the top of the valence band,
which is full of electrons, and the bottom of the conduction band, which does not contain
electrons.
Undulating interference waveforms sometimes occur if light is passed
through a film. The film thickness of a sample can be determined by
using these interference waveforms. The figure shows transmittance
data for a cling film. A clear interference waveform is produced.
Utilizing optional film thickness measurement software, the film
thickness is calculated as 10.4 μm.
(Caution) The sample's refractive index must be entered for the film
thickness calculation.
The red and blue lines are the absorption spectra for dsDNA and BSA
(bovine serum albumin), respectively.
The concentration values are 45 ng/μL for dsDNA and 2.2 mg/mL for
BSA.
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